DESCRIPTION
This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management switch.

FEATURES
• Low on-resistance
    RDS(on)1 = 9.3 mΩ (TYP.) (VGS = 10 V, ID = 4.5 A)
    RDS(on)2 = 13.8 mΩ (TYP.) (VGS = 4.5 V, ID = 4.5 A)
• Low Ciss : Ciss = 1850 pF (TYP.)
• Built-in G-S protection diode
• Small and surface mount package (Power SOP8)