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TSUS5402(2008) Datasheet - Vishay Semiconductors

TSUS5400 image

Part Name
TSUS5402

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  1999   2009   lastest PDF  

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page
5 Pages

File Size
102.5 kB

MFG CO.
Vishay
Vishay Semiconductors 

DESCRIPTION
TSUS5400 is an infrared, 950 nm emitting diode in GaAs technology molded in a blue-gray tinted plastic package.


FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Leads with stand-off
• Peak wavelength: λp = 950 nm
• High reliability
• Angle of half intensity: ϕ = ± 22°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Lead (Pb)-free component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC


APPLICATIONS
• Infrared remote control and free air transmission systems with low forward voltage and small package requirements
• Emitter in transmissive sensors
• Emitter in reflective sensors

Page Link's: 1  2  3  4  5 

Part Name
Description
View
MFG CO.
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs ( Rev : 2008 )
PDF
Vishay Siliconix
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs
PDF
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs ( Rev : 2008 )
PDF
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs ( Rev : 2008 )
PDF
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs ( Rev : 2008 )
PDF
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs ( Rev : 2008 )
PDF
Vishay Siliconix
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs ( Rev : 2008 )
PDF
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs ( Rev : 2008 )
PDF
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs ( Rev : 2008 )
PDF
Vishay Siliconix
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs ( Rev : 2008 )
PDF
Vishay Semiconductors

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