TSTA7300(1999) Datasheet - Vishay Semiconductors
MFG CO.

Vishay Semiconductors
Description
TSTA7300 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO–18 package. Its glass lens provides a high radiant intensity without external optics.
FEATUREs
● High radiant power and radiant intensity
● Suitable for pulse operation
● Angle of half intensity ϕ = ± 12
● Peak wavelength p = 875 nm
● High reliability
● Good spectral matching to Si photodetectors
APPLICATIONs
Radiation source in near infrared range
Part Name
Description
View
MFG CO.
GaAlAs IR Emitting Diode in Hermetically Sealed TO18 Case ( Rev : 1999 )
Vishay Semiconductors
GaAlAs IR Emitting Diode in Hermetically Sealed TO18 Case ( Rev : 1999 )
Vishay Semiconductors
GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case
Vishay Semiconductors
GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case
Vishay Semiconductors
GaAs IR Emitting Diodes in Hermetically Sealed TO-18 Case
Vishay Semiconductors
Bipolar PNP Device in a Hermetically sealed TO18
Semelab - > TT Electronics plc
Bipolar NPN Device in a Hermetically sealed TO18
Semelab - > TT Electronics plc
HERMETICALLY SEALED TO-5 CASE
Unspecified
HERMETICALLY SEALED TO-5 CASE
Clairex Technologies, Inc
Specification of GaAlAs IR Emitting Diode Chip
Vishay Semiconductors