DESCRIPTION
TSTA7100 is an infrared, 875 nm emitting diode in GaAlAs technology in a hermetically sealed TO-18 package with lens.

FEATURES
• Package type: leaded
• Package form: TO-18
• Dimensions (in mm): ∅ 4.7
• Peak wavelength: λp = 875 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 5°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Lead (Pb)-free component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC

APPLICATIONS
• Radiation source near infrared range