General Description
The TSM10N60 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge.

FEATUREs
● Low RDS(ON) 0.75Ω (Max.)
● Low gate charge typical @ 45nC (Typ.)
● Low Crss typical @ 20pF (Typ.)
● Fast Switching