Part Name
TSHG5410
PDF
page
5 Pages
File Size
103.7 kB
MFG CO.
Vishay Semiconductors
TSHG5410 Datasheet - Vishay Semiconductors
Vishay Semiconductors
DESCRIPTION
TSHG5410 is an infrared, 850 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package.
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Leads with stand-off
• Peak wavelength: λp = 850 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 18°
• Low forward voltage
• Suitable for high pulse current operation
• High modulation bandwidth: fc = 18 MHz
• Good spectral matching with CMOS cameras
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
APPLICATIONS
• Infrared radiation source for operation with CMOS
cameras
• High speed IR data transmission
Part Name
Description
View
MFG CO.
High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero ( Rev : 2010 )
Vishay Semiconductors
High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero ( Rev : 2009 )
Vishay Semiconductors
High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero ( Rev : 2013 )
Vishay Semiconductors
High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero ( Rev : 2009 )
Vishay Semiconductors
High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero ( Rev : 2009 )
Vishay Semiconductors
High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero ( Rev : 2009 )
Vishay Semiconductors
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