DESCRIPTION
The TSHA650. series are infrared, 875 nm emitting diodes in GaAlAs technology, molded in a clear, untinted plastic package.

FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Peak wavelength: λp = 875 nm
• High reliability
• Angle of half intensity: ϕ = ± 24°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Lead (Pb)-free component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC

APPLICATIONS
• Infrared remote control and free air data transmission systems with comfortable radiation angle
• This emitter series is dedicated to systems with panes in transmission space between emitter and detector, because of the low absorbtion of 875 nm radiation in glass