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TS8520VA(2012) Datasheet - Vishay Semiconductors

TS8520VA image

Part Name
TS8520VA

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page
4 Pages

File Size
90.2 kB

MFG CO.
Vishay
Vishay Semiconductors 

DESCRIPTION
TS8520VA is a high power infrared, 850 nm surface emitting diode in GaAlAs technology with high radiant power and high speed. Polarity confoguration is “n-up”.


FEATURES
• Package type: chip
• Package form: single chip
• Technology: surface emitter
• Dimensions chip (L x W x H in mm):
   0.508 x 0.508 x 0.17
• Peak wavelength: λ = 850 nm
• Compliant to RoHS Directive 2011/65/EU and in
   accordance to WEEE 2002/96/EC


Part Name
Description
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MFG CO.
Specification of High Power IR Emitting Diode Chip
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Specification of High Power IR Emitting Diode Chip ( Rev : 2017 )
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Vishay Semiconductors
Specification of High Power IR Emitting Diode Chip
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Vishay Semiconductors
Specification of High Power IR Emitting Diode Chip ( Rev : 2017 )
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Specification of High Power IR Emitting Diode Chip ( Rev : 2012 )
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Vishay Semiconductors
Specification of High Power IR Emitting Diode Chip
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Vishay Semiconductors
Specification of High Power IR Emitting Diode Chip
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Vishay Semiconductors
Specification of High Power IR Emitting Diode Chip ( Rev : 2017 )
PDF
Vishay Semiconductors
Specification of High Power IR Emitting Diode Chip
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Vishay Semiconductors

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