TS8520VA(2012) Datasheet - Vishay Semiconductors
MFG CO.

Vishay Semiconductors
DESCRIPTION
TS8520VA is a high power infrared, 850 nm surface emitting diode in GaAlAs technology with high radiant power and high speed. Polarity confoguration is “n-up”.
FEATURES
• Package type: chip
• Package form: single chip
• Technology: surface emitter
• Dimensions chip (L x W x H in mm):
0.508 x 0.508 x 0.17
• Peak wavelength: λ = 850 nm
• Compliant to RoHS Directive 2011/65/EU and in
accordance to WEEE 2002/96/EC
Part Name
Description
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MFG CO.
Specification of High Power IR Emitting Diode Chip
Vishay Semiconductors
Specification of High Power IR Emitting Diode Chip ( Rev : 2017 )
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Specification of High Power IR Emitting Diode Chip
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Specification of High Power IR Emitting Diode Chip ( Rev : 2017 )
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Vishay Semiconductors
Specification of High Power IR Emitting Diode Chip
Vishay Semiconductors
Specification of High Power IR Emitting Diode Chip
Vishay Semiconductors
Specification of High Power IR Emitting Diode Chip ( Rev : 2017 )
Vishay Semiconductors
Specification of High Power IR Emitting Diode Chip
Vishay Semiconductors