TPCP8006(2008) Datasheet - Toshiba
MFG CO.
Toshiba
Notebook PC Applications
Portable Equipment Applications
• Small footprint due to small and thin package
• Low drain-source ON-resistance: RDS (ON) = 6.5 mΩ (typ.)
• High forward transfer admittance:|Yfs| = 36 S (typ.)
• Low leakage current: IDSS = 10 μA (VDS = 20 V)
• Enhancement mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 1 mA)
Part Name
Description
View
MFG CO.
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV)
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS IV)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV)
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)
Toshiba
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III) ( Rev : 2009 )
Toshiba
