TPC8027 Datasheet - Toshiba
MFG CO.

Toshiba
Lithium Ion Battery Applications
Portable Equipment Applications
Notebook PC Applications
• Small footprint due to small and thin package
• Low drain-source ON resistance: RDS (ON) = 2.1 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 48 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 30 V)
• Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)
Part Name
Description
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MFG CO.
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV)
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS IV) ( Rev : 2008 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS IV)
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS IV)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV)
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)
Toshiba