General Description
This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coeffcient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown.

FEATUREs
► High input impedance and high gain
► Low power drive requirement
► Ease of paralleling
► Low CISS and fast switching speeds
► Excellent thermal stability
► Integral source-drain diode
► Free from secondary breakdown

APPLICATIONs
► Logic level interfaces - ideal for TTL and CMOS
► Solid state relays
► Battery operated systems
► Photo voltaic systems
► Analog switches
► Power management
► Telecom switches