Inverter for Air Conditioner IGBT/Power MOS FET Gate Drive Industrial Inverter

The TOSHIBA TLP351 consists of a GaAℓAs light emitting diode and a integrated photodetector.
This unit is 8-lead DIP package. TLP351 is suitable for gate driving circuit of IGBT or power MOS FET. Especially TLP351 is capable of “direct” gate drive of lower Power IGBTs.

•  Peak output current: ±0.6 A (max)
•  Guaranteed performance over temperature: −40 to 100°C
•  Supply current: 2 mA (max)
•  Power supply voltage: 10 to 30 V
•  Threshold input current : IF= 5 mA (max)
•  Switching time (tpLH/tpHL) : 700 ns (max)
•  Common mode transient immunity: 10 kV/μs
•  Isolation voltage: 3750 Vrms
•  Option(D4)
   VDE Approved : DIN EN60747-5-2
  Maximum Operating Insulation Voltage : 890VPK
  Highest Permissible Over Voltage   : 4000VPK