ParameterParameterParameterTRANSISTOR INVERTERS
INVERTER FOR AIR CONDITIONERS
IGBT GATE DRIVERS
POWER MOSFET GATE DRIVERS

The TOSHIBA TLP250F(INV) consists of a GaAℓAs light emitting diode and a integrated photodetector.
This unit is 8-lead DIP.
TLP250F is suitable for gate driving circuit of IGBT or power MOSFET.
​​​​​​​
• Input Threshold Current: IF = 5 mA (max.)
• Supply Current : 11 mA (max.)
• Supply Voltage : 10 V to 35 V
• Output Current : ±1.5 A (max.)
• Switching Time : tpHL, tpLH = 0.5 μs (max.)
• Isolation Voltage : 2500 Vrms (min.)
• UL Recognized : UL1577, file no. E67349
• Option (D4) type
   VDE Approved: DIN VDE0884 / 06.92. No. 76823
      Maximum Operating Insulation Voltage: 1140 VPK
      Highest Permissible Overvoltage          : 6000 VPK
      (Note 1) When an VDE0884 approved type is needed,
                    please designate the “ Option (D4) ”.
• Structural Parameter
   Creepage Distance: 8.0 mm (min.)
   Clearance: 8.0 mm (min.)