Part Name
TK60A08J1
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MFG CO.
Toshiba
TK60A08J1 Datasheet - Toshiba
Toshiba
Switching Regulator Application
•High-Speed switching
• Small gate charge: Qg= 86 nC (typ.)
• Low drain-source ON resistance: RDS (ON)= 6.2 mΩ(typ.)
• High forward transfer admittance: |Yfs| = 120 S (typ.)
• Low leakage current: IDSS= 10 μA (max) (VDS= 75 V)
•Enhancement-mode: Vth= 1.1 to 2.3 V (VDS= 10 V, ID= 1 mA)
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII) ( Rev : 2004 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII)
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII)
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII) ( Rev : 2004 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII) ( Rev : 2003 )
Toshiba
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