TK17J65U Datasheet - Toshiba
MFG CO.

Toshiba
Features
(1) Low drain-source on-resistance: RDS(ON) = 0.20 Ω (typ.)
(2) High forward transfer admittance: |Yfs| = 12.0 S (typ.)
(3) Low leakage current: IDSS = 100 µA (max) (VDS = 650 V)
(4) Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)
APPLICATIONs
• Switching Voltage Regulators
Part Name
Description
View
MFG CO.
MOSFETs Silicon N-Channel MOS (DTMOS)
Toshiba
MOSFETs Silicon N-Channel MOS (DTMOS)
Unspecified
MOSFETs Silicon N-Channel MOS (DTMOS)
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MOSFETs Silicon N-Channel MOS (DTMOS)
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MOSFETs Silicon N-Channel MOS (DTMOS IV)
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MOSFETs Silicon N-Channel MOS (DTMOS IV) ( Rev : 2013 )
Toshiba
MOSFETs Silicon N-Channel MOS (DTMOS II)
Toshiba
MOSFETs Silicon N-Channel MOS (DTMOS IV)
Toshiba
MOSFETs Silicon N-Channel MOS (DTMOS IV)
Toshiba
MOSFETs Silicon N-Channel MOS (DTMOS IV)
Toshiba