TK16J55D(2010) Datasheet - Toshiba
MFG CO.
Toshiba
Switching Regulator Applications
• Low drain-source ON-resistance: RDS (ON) = 0.31 Ω (typ.)
• High forward transfer admittance: |Yfs| = 6.5 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 550 V)
• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Part Name
Description
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MFG CO.
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type ( Rev : 2010 )
Toshiba
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type ( Rev : 2007 )
Toshiba
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type ( Rev : 2008 )
Toshiba
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type ( Rev : 2007 )
Toshiba
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type ( Rev : 2012 )
Toshiba
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
Toshiba
TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type
Toshiba
TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( Rev : 2007 )
Toshiba
