TK16E60W Datasheet - Toshiba
MFG CO.

Toshiba
Features
(1) Low drain-source on-resistance: RDS(ON) = 0.16 Ω (typ.)
by used to Super Junction Structure : DTMOS
(2) Easy to control Gate switching
(3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.79 mA)
APPLICATIONs
• Switching Voltage Regulators
Part Name
Description
View
MFG CO.
MOSFETs Silicon N-Channel MOS (DTMOSIV)
Toshiba
MOSFETs Silicon N-Channel MOS (DTMOSIV)
Toshiba
MOSFETs Silicon N-Channel MOS (DTMOSIV) ( Rev : 2012 )
Toshiba
MOSFETs Silicon N-Channel MOS (DTMOSIV)
Toshiba
MOSFETs Silicon N-Channel MOS (DTMOSIV)
Toshiba
MOSFETs Silicon N-Channel MOS (DTMOSIV)
Toshiba
MOSFETs Silicon N-Channel MOS (DTMOSIV)
Toshiba
MOSFETs Silicon N-Channel MOS (DTMOSIV)
Toshiba
MOSFETs Silicon N-Channel MOS (DTMOSIV)
Toshiba
MOSFETs Silicon N-Channel MOS (DTMOSIV) ( Rev : 2012 )
Toshiba