TK13A65U(2009) Datasheet - Toshiba
MFG CO.
Toshiba
Switching Regulator Applications
• Low drain-source ON resistance: RDS (ON) = 0.32 Ω (typ.)
• High forward transfer admittance: ⎪Yfs⎪ = 8.0 S (typ.)
• Low leakage current: IDSS = 100 μA (max) (VDS = 650 V)
• Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)
Part Name
Description
View
MFG CO.
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type ( Rev : 2010 )
Toshiba
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type ( Rev : 2007 )
Toshiba
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type ( Rev : 2008 )
Toshiba
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type ( Rev : 2007 )
Toshiba
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type ( Rev : 2012 )
Toshiba
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
Toshiba
TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type
Toshiba
TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( Rev : 2007 )
Toshiba
