TK12A65D(2011) Datasheet - Toshiba
MFG CO.

Toshiba
Features
(1) Low drain-source on-resistance: RDS(ON) = 0.46 Ω (typ.)
(2) High forward transfer admittance: |Yfs| = 6.0 S (typ.)
(3) Low leakage current: IDSS = 10 µA (max) (VDS = 650 V)
(4) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
APPLICATIONs
• Switching Voltage Regulators
Part Name
Description
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MFG CO.
MOSFETs Silicon N-Channel MOS (π-MOSVII) ( Rev : 2011 )
Toshiba
MOSFETs Silicon N-Channel MOS (π-MOSVII)
Toshiba
MOSFETs Silicon N-Channel MOS (π-MOSVII)
Toshiba
MOSFETs Silicon N-Channel MOS (π-MOSVII) ( Rev : 2011 )
Toshiba
MOSFETs Silicon N-Channel MOS (π-MOSVII)
Toshiba
MOSFETs Silicon N-Channel MOS (π-MOSVII)
Toshiba
MOSFETs Silicon N-Channel MOS (π-MOSVII)
Toshiba
MOSFETs Silicon N-Channel MOS (π-MOSVII)
Toshiba
MOSFETs Silicon N-Channel MOS (π-MOSVII)
Toshiba
MOSFETs Silicon N-Channel MOS (π-MOSVII)
Toshiba