TK11S10N1L Datasheet PDF , Toshiba : MOSFETs Silicon N-channel MOS (U-MOSVIII-H)

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TK11S10N1L Datasheet - Toshiba

Part Name

TK11S10N1L

Description

MOSFETs Silicon N-channel MOS (U-MOSVIII-H)

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page

9 Pages

File Size

428.6 kB

MFG CO.

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Features
(1) AEC-Q101 qualified
(2) Low drain-source on-resistance: RDS(ON) = 23 mΩ (typ.) (VGS = 10 V)
(3) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V)
(4) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.1 mA)

APPLICATIONs
• Automotive
• Motor Drivers
• Switching Voltage Regulators

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