
Nell Semiconductor Co., Ltd
Complementary Silicon Power Transistor
25A/40~100V/125W
FEATURES
● Complementary NPN-PNP transistors
● Low collector-emitter saturation voltage
● Satisfactory linearity of foward current
transfer ratio hFE
● TO-3P package which can be installed
to the heat sink with one screw
● Collector - Emitter Saturation Voltage:
VCE(sat) = 1.8Vdc (MAX.) @ IC = 15A
● Collector - Emitter Saturation Voltage:
VCEO(sus) = 40Vdc (Min.) - TIP35,TIP36
= 60Vdc (Min.) - TIP35A,TIP36A
= 80Vdc (Min.) - TIP35B, TIP36B
= 100Vdc (Min.) - TIP35C, TIP36C
● DC Current Gain hFE = 25 (Min.) @ Ic = 1.5A
● High Current Gain - Bandwidth product
fT = 3.0 MHz (Min.) @ Ic=1.0A
APPLICATIONS
● Audio amplifier
● General purpose switching and amplifier