Complementary Silicon Transistors, Plastic, Medium-Power

Designed for general−purpose amplifier and low−speed switching applications.

FEATUREs
• High DC Current Gain −
    hFE = 2500 (Typ) @ IC
            = 4.0 Adc
• Collector−Emitter Sustaining Voltage − @ 30 mAdc
    VCEO(sus) = 60 Vdc (Min) − TIP100, TIP105
                       = 80 Vdc (Min) − TIP101, TIP106
                       = 100 Vdc (Min) − TIP102, TIP107
• Low Collector−Emitter Saturation Voltage −
    VCE(sat) = 2.0 Vdc (Max) @ IC
                    = 3.0 Adc
                    = 2.5 Vdc (Max) @ IC = 8.0 Adc
• Monolithic Construction with Built−in Base−Emitter Shunt Resistors
• These Devices are Pb−Free and are RoHS Compliant