General Description
The Qorvo TGF2929-HM is a 100 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5 GHz. The device is constructed with Qorvo’s proven QGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.
Hermetic package
Lead-free and ROHS compliant
Evaluation boards are available upon request.

Product Features
• Frequency: DC to 3.5 GHz
• Output Power (P3dB)1: 132 W
• Linear Gain1: 17.4 dB
• Typical DEFF (P3dB)1: 74.9%
• Operating Voltage: 28 V
• Low thermal resistance package
• CW and Pulse capable
   Note 1: @ 2 GHz

APPLICATIONs
• Space radar
• Satcomm
• Military radar
• Civilian radar
• Land mobile and military radio communications
• Test instrumenation
• Wideband or narrowband amplifiers
• Jammers