
Vishay Semiconductors
Description
The TCED1100/ TCED2100/ TCED4100 consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead up to 16-lead plastic dual inline package.
The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements.
FEATUREs
Approvals:
● BSI: BS EN 41003, BS EN 60095 (BS 415), BS EN 60950 (BS 7002), Certificate number 7081 and 7402
● FIMKO (SETI): EN 60950, Certificate number 11992
● Underwriters Laboratory (UL) 1577 recognized, file number E-76222 – Double Protection
● CSA (C–UL) 1577 recognized, file number E-76222 – Double Protection
● VDE 0884, Certificate number 115667
VDE 0884 related features:
● Rated impulse voltage (transient overvoltage) VIOTM = 8 kV peak
● Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV
● Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS (848 V peak)
● Rated recurring peak voltage (repetitive) VIORM = 600 VRMS
● Creepage current resistance according to VDE 0303/IEC 112 Comparative Tracking Index: CTI ≥ 175
● Thickness through insulation ≥ 0.75 mm
● Internal creepage distance > 4 mm
General features:
● Isolation materials according to UL94-VO
● Pollution degree 2 (DIN/VDE 0110 / resp. IEC 664)
● Climatic classification 55/100/21 (IEC 68 part 1)
● Special construction:
Therefore, extra low coupling capacity of
typical 0.2 pF, high Common Mode Rejection
● Low temperature coefficient of CTR
● G = Leadform 10.16 mm;
provides creepage distance > 8 mm,
for TCED2100/ TCED4100 optional;
suffix letter ‘G’ is not marked on the optocoupler
● Coupling System U
APPLICATIONs
Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation):
● For appl. class I – IV at mains voltage ≤ 300 V
● For appl. class I – III at mains voltage ≤ 600 V according to VDE 0884, table 2, suitable for: