TB9414VA Datasheet - Vishay Semiconductors
MFG CO.

Vishay Semiconductors
DESCRIPTION
TB9414VA is an infrared, 940 nm emitting diode in GaAlAs double hetero technology with high radiant power and high speed. Anode is the bond pad on top.
FEATURES
• Package type: chip
• Package form: single chip
• Technology: double hetero
• Dimensions chip (L x W x H in mm):
0.37 x 0.37 x 0.19
• Peak wavelength: λ = 940 nm
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Part Name
Description
View
MFG CO.
Specification of GaAlAs IR Emitting Diode Chip
Vishay Semiconductors
Specification of GaAlAs IR Emitting Diode Chip
Vishay Semiconductors
Specification of GaAlAs IR Emitting Diode Chip
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Specification of GaAlAs IR Emitting Diode Chip
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Specification of GaAlAs IR Emitting Diode Chip
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Specification of High Power IR Emitting Diode Chip
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Specification of High Power IR Emitting Diode Chip ( Rev : 2017 )
Vishay Semiconductors
Specification of High Power IR Emitting Diode Chip
Vishay Semiconductors
Specification of High Power IR Emitting Diode Chip
Vishay Semiconductors