Product Overview
The T2G6001528-Q3 is an 18W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6.0 GHz. The device is constructed with Qorvo’s proven TQGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.
Lead free and RoHS compliant.
Evaluation boards are available upon request.

KEY FEATUREs
• Operating Frequency Range: DC – 6.0 GHz
• Operating Drain Voltage: 28 V
• Output Power (P3dB): 19 W at 5.2 GHz
• Low thermal resistance package

APPLICATIONs
• Military Radar
• Civilian Radar
• Professional and military radio communications
• Test Instrumentation
• Wideband/Narrowband Amplifiers
• Jammers