Part Name
SWP830D1
Other PDF
no available.
PDF
page
7 Pages
File Size
1.2 MB
MFG CO.
Xian Semipower Electronic Technology Co., Ltd.
SWP830D1 Datasheet - Xian Semipower Electronic Technology Co., Ltd.
Xian Semipower Electronic Technology Co., Ltd.
General Description
This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
FEATUREs
● High ruggedness
● Low RDS(ON) (Typ 1.33Ω)@VGS=10V
● Low Gate Charge (Typ 17nC)
● Improved dv/dt Capability
● 100% Avalanche Tested
● Application: DC-DC， LED， PC
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