Part Name
SWH045R02VT
Description
Other PDF
PDF
page
6 Pages
File Size
664.7 kB
MFG CO.
Xian Semipower Electronic Technology Co., Ltd.
HOME >>> Xian Semipower Electronic Technology Co., Ltd. >>> SWH045R02VT PDF
SWH045R02VT Datasheet - Xian Semipower Electronic Technology Co., Ltd.
Xian Semipower Electronic Technology Co., Ltd.
General Description
This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
FEATUREs
● High ruggedness
● Low RDS(ON) (Typ 4.6mΩ)@VGS=2.5V
Low RDS(ON) (Typ 3.7mΩ)@VGS=4.5V
Low RDS(ON) (Typ 3.3mΩ)@VGS=10V
● Low Gate Charge (Typ 50nC)
● Improved dv/dt Capability
● 100% Avalanche Tested
● Application: DC-DC Converter,Motor Control
Synchronous Rectification
Part Name
Description
View
MFG CO.
ENHANCED SPECIFICATION SURFACE MOUNT SILICON N-CHANNEL ENHANCEMENT-MODE MOSFET ( Rev : 2013 )
Central Semiconductor
N-channel Enhanced mode TO-251/TO-251M/TO-252 MOSFET
Xian Semipower Electronic Technology Co., Ltd.
N-channel Enhanced mode TO-220/TO-220FT/TO-263 MOSFET
Xian Semipower Electronic Technology Co., Ltd.
N-channel Enhanced mode DFN5*6/TO-251/TO-252/TO-220 MOSFET
Xian Semipower Electronic Technology Co., Ltd.
Share Link: 