Part Name
SW6N90
Description
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PDF
page
5 Pages
File Size
399.6 kB
MFG CO.
Xian Semipower Electronic Technology Co., Ltd.
SW6N90 Datasheet - Xian Semipower Electronic Technology Co., Ltd.
Xian Semipower Electronic Technology Co., Ltd.
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances.
FEATUREs
◾ High ruggedness
◾ RDS(ON) (Max 2.3 Ω)@VGS=10V
◾ Gate Charge (Typical 40nC)
◾ Improved dv/dt Capability
◾ 100% Avalanche Tested
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