GENERAL DESCRIPTION
   -SVD640T/D/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure middle/low-voltage VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
   These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.

FEATURES
• 18A,200V,RDS(on)(typ.)=0.12Ω@VGS=10V
• Low gate charge
• Low Crss
• Fast switching
• Improved dv/dt capability