Part Name
STW62NM60N
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PDF
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13 Pages
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MFG CO.
STMicroelectronics
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STW62NM60N Datasheet - STMicroelectronics
STMicroelectronics
Description
This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
FEATUREs
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
APPLICATIONs
■ Switching applications
Part Name
Description
View
MFG CO.
N-channel 600 V, 0.150 Ω typ., 19.5 A, FDmesh II Power MOSFET in a TO-247 package ( Rev : 2020 )
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N-channel 600 V, 0.135 Ω typ., 20 A MDmesh™ II Power MOSFET in a TO-247 package ( Rev : 2016 )
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N-channel 600 V, 0.055 Ω typ., 44 A MDmesh™ II Power MOSFET in a TO-247 package
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N-channel 600 V, 0.135 Ω typ., 20 A MDmesh™ II Power MOSFETs in a TO-247 package
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Automotive-grade N-channel 600 V, 0.26 Ω typ., 13 A MDmesh™ II Power MOSFET in a TO-247 package
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N-channel 600 V, 60 mΩ typ., 42 A MDmesh M2 Power MOSFET in a TO-247 package
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N-channel 600 V, 0.047 Ω typ., 51 A FDmesh™ II Power MOSFET (with fast diode) in a TO-247 package
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N-channel 600 V, 0.075 Ω typ., 35 A FDmesh™ II Power MOSFET (with fast diode) in a TO-247 package
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N-channel 600 V, 0.065 Ω typ., 40 A MDmesh™ DM2 Power MOSFET in a TO-247 package
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N-channel 600 V, 0.26 Ω typ., 12 A MDMesh™ DM2 Power MOSFET in a TO-247 package
STMicroelectronics
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