STW48N60M2-4 Datasheet - STMicroelectronics
MFG CO.

STMicroelectronics
Description
This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.
FEATUREs
• Excellent switching performance thanks to the extra driving source pin
• Extremely low gate charge
• Excellent output capacitance (Coss) profile
• 100% avalanche tested
• Zener-protected
APPLICATIONs
• Switching applications
Part Name
Description
View
MFG CO.
N-channel 600 V, 60 mΩ typ., 42 A MDmesh M2 Power MOSFET in a TO-247 package
STMicroelectronics
N-channel 600 V, 0.06 Ω typ., 42 A MDmesh™ M2 Power MOSFET in a TO-247 package ( Rev : 2017 )
STMicroelectronics
N-channel 600 V, 78 mΩ typ., 34 A MDmesh M2 Power MOSFET in a TO247-4 package
STMicroelectronics
N-channel 600 V, 0.255 Ω typ., 13 A MDmesh M2 Power MOSFET in a TO-220FP package
STMicroelectronics
N-channel 600 V, 0.395 Ω typ., 9 A MDmesh™ M2 Power MOSFET in a TO-220 package
STMicroelectronics
N-channel 650 V, 0.056 Ω typ., 42 A, MDmesh™ V Power MOSFET in a TO247-4 package
STMicroelectronics
N-channel 600 V, 1.3 Ω typ., 3.5 A MDmesh™ M2 Power MOSFET in a TO-220FP package
STMicroelectronics
N-channel 600 V, 0.340 Ω typ., 11 A MDmesh™ M2 EP Power MOSFET in a DPAK package ( Rev : 2018 )
STMicroelectronics
N-channel 600 V, 0.340 Ω typ., 11 A MDmesh™ M2 EP Power MOSFET in a DPAK package
STMicroelectronics
N-channel 600 V, 0.550 Ω typ., 7.5 A MDmesh™ M2 EP Power MOSFET in a TO-220FP package
STMicroelectronics