Description
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
FEATUREs
• Worldwide best RDS(on) * area
• Higher VDSS rating and high dv/dt capability
• Excellent switching performance
• 100% avalanche tested
APPLICATIONs
• Switching applications
Part Name
Description
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MFG CO.
N-channel 650 V, 0.124 Ω, 22 A, MDmesh M5 Power MOSFETs in D2PAK, TO‑220FP, TO‑220 and TO-247 packages ( Rev : 2019 )
STMicroelectronics
N-channel 650 V, 0.124 Ω typ., 22 A MDmesh™ V Power MOSFET in D2PAK, TO-220FP, I2PakFP, TO-220 and TO-247 packages
STMicroelectronics
N-channel 650 V, 0.070 Ω, 33 A MDmesh™ V Power MOSFET in I2PAK, TO-220, TO-220FP, D2PAK and TO-247
STMicroelectronics
N-channel 650 V, 0.067 Ω typ., 35 A MDmesh™ V Power MOSFET in D2PAK, TO-220FP and TO-220 packages
STMicroelectronics
N-channel 900 V, 1.56 Ω typ., 5.8 A SuperMESH™ Power MOSFET in D2PAK, TO-220, TO-220FP and TO-247 packages
STMicroelectronics
N-channel 650 V, 0.160 Ω typ., 18 A MDmesh™ V Power MOSFET in D2PAK, I2PAK, TO-220 and TO-247 packages
STMicroelectronics
N-channel 650 V, 0.198 Ω typ., 15 A MDmesh™ V Power MOSFET in TO-220FP, I²PAK, TO-220 and TO-247 packages
STMicroelectronics
N-channel 650 V, 0.185 Ω typ., 16 A MDmesh M2 Power MOSFET in D2PAK, TO-220FP and TO-220 packages
STMicroelectronics
N-channel 800 V, 0.19 Ω typ., 19.5 A SuperMESH™5 Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247 packages ( Rev : 2013 )
STMicroelectronics
N-channel 650 V, 0.33 Ω, 12 A MDmesh™ II Power MOSFET TO-220, TO-220FP, D2PAK, I2PAK, TO-247
STMicroelectronics