STW14NM50 Datasheet - STMicroelectronics
MFG CO.

STMicroelectronics
DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprierati strip technique yields overall dynamic performance that is significantly better than that of similar completition’s products.
General Features
■ TYPICAL RDS(on) = 0.32 Ω
■ HIGH dv/dt AND AVALANCHE CAPABILITIES
■ 100% AVALANCHE RATED
■ LOW INPUT CAPACITANCE AND GATE CHARGE
■ LOW GATE INPUT RESISTANCE
■ TIGHT PROCESS CONTROL AND HIGH MANUFACTORING YIELDS
APPLICATIONS
The MDmesh™ family is very suitablr for increase
the power density of high voltage converters allowing
system miniaturization and higher efficiencies.
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Part Name
Description
View
MFG CO.
N-CHANNEL 550V @ Tjmax - 0.065Ω - 45A TO-247 MDmesh™ MOSFET ( Rev : 2004 )
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N-CHANNEL 550V @ Tjmax - 0.08Ω - 45A TO-247 MDmesh™ MOSFET ( Rev : 2005 )
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N - CHANNEL 500V - 0.33Ω - 14A - TO-247 PowerMESH™ MOSFET
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N - CHANNEL 500V - 0.33Q - 14A - TO-247 PowerMESH™ MOSFET
New Jersey Semiconductor
N-CHANNEL 500V - 0.31Ω - 14A TO-247 PowerMesh™II MOSFET
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N-CHANNEL 500V - 0.40 Ω - 14A - TO-247 PowerMESH™ MOSFET
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N-channel 650V@Tjmax - 0.09Ω- 45A - TO-247 MDmesh™ Power MOSFET
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N-channel 650V@Tjmax - 0.09Ω - 45A - TO-247 MDmesh™ Power MOSFET ( Rev : 2007 )
STMicroelectronics