Part Name
STU16L01
Other PDF
no available.
PDF
page
5 Pages
File Size
1.3 MB
MFG CO.
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
STU16L01 Datasheet - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
Description：
This N-Channel MOSFET uses advanced SGT technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
Features：
1) VDS=100 V,ID=15A,RDS(ON)<75 mΩ @VGS=10V
2) Low gate charge.
3) Green device available.
4) Advanced high cell denity trench technology for ultra Iow RDS(ON).
5) Excellent package for good heat dissipation.
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