STU10NA50 Datasheet - STMicroelectronics
MFG CO.

STMicroelectronics
DESCRIPTION
The Max220TM package is a new high volume power package exibiting the same footprint as the industry standard TO-220, but designed to accomodate much larger silicon chips, normally supplied in bigger packages. The increased die capacity makes the device ideal to reduce component count in multiple paralleled TO-220 designs and save board space with respect to larger packages.
■ TYPICAL RDS(on) = 0.5 Ω
■ ± 30V GATE TO SOURCE VOLTAGE RATING
■ REPETITIVE AVALANCHE TESTED
■ LOW INTRINSIC CAPACITANCE
■ 100% AVALANCHE TESTED
■ GATE CHARGE MINIMIZED
■ REDUCED THRESHOLD VOLTAGE SPREAD
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES (UPS)
Part Name
Description
View
MFG CO.
N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
STMicroelectronics
N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
STMicroelectronics
N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
STMicroelectronics
N- CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
New Jersey Semiconductor
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
STMicroelectronics
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
STMicroelectronics
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
STMicroelectronics
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR ( Rev : 1996 )
STMicroelectronics
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
STMicroelectronics
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
STMicroelectronics