Description
The TURBOSWITCH “H” is an ultra high performance diode composed of two 300 V dice in series. TURBOSWITCH “H” family drastically cuts losses in the associated MOSFET when run at high dIF/dt.

FEATUREs and benefits
■ Especially suited as boost diode in continuous mode power factor correctors and hard switching conditions
■ Designed for high di/dt operation. Hyperfast recovery current to compete with SiC devices. Allows downsizing of mosfet and heatsinks
■ Internal ceramic insulated devices with equal thermal conditions for both 300 V diodes
■ Insulation (2500 VRMS) allows placement on same heatsink as mosfet and flexible heatsinking on common or separate heatsink
■ Static and dynamic equilibrium of internal diodes are warranted by design
■ Package Capacitance: C = 7 pF