Part Name
STP8NM50N
Other PDF
PDF
page
21 Pages
File Size
628.9 kB
MFG CO.
STMicroelectronics
STP8NM50N(2018) Datasheet - STMicroelectronics
STMicroelectronics
Description
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters.
FEATUREs
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
APPLICATIONs
• Switching applications
Part Name
Description
View
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N-channel 250 V, 0.140 Ω typ., 17 A STripFET™ II Power MOSFETs in DPAK, TO-220FP and TO-220 packages ( Rev : 2018 )
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N-channel 500 V, 0.2 Ω typ., 14 A MDmesh™ II Power MOSFETs in TO-220FP, TO-220 and TO-247 packages
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