Part Name
STP33N60M2
Other PDF
PDF
page
20 Pages
File Size
1.1 MB
MFG CO.
STMicroelectronics
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STP33N60M2(2013) Datasheet - STMicroelectronics
STMicroelectronics
Description
These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters.
FEATUREs
• Extremely low gate charge
• Lower RDS(on) x area vs previous generation
• MDmesh™ II technology
• Low gate input resistance
• 100% avalanche tested
• Zener-protected
APPLICATIONs
• Switching applications
• LCC converters, resonant converters
Part Name
Description
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