Part Name
STP18NM60N
Description
Other PDF
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page
21 Pages
File Size
992.5 kB
MFG CO.
STMicroelectronics
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STP18NM60N Datasheet - STMicroelectronics
STMicroelectronics
Description
These devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
FEATUREs
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
APPLICATION
Switching applications
Part Name
Description
View
MFG CO.
N-channel 600 V, 0.17 Ω typ., 17 A FDmesh™ II Power MOSFET in D²PAK, TO-220FP, TO-220 and TO-247 packages ( Rev : 2013 )
STMicroelectronics
N-channel 600 V, 0.150 Ω, 19.5 A, FDmesh™ II Power MOSFET (with fast diode) D²PAK, I²PAK, TO-220, TO-220FP, TO-247
STMicroelectronics
N-channel 800 V, 0.35 Ω, 11 A MDmesh™ Power MOSFET in D²PAK, TO-220FP, I²PAK, TO-220, TO-247
STMicroelectronics
N-channel 650 V, 0.095 Ω, 24 A, MDmesh™ V Power MOSFET in D²PAK, I²PAK, TO-220FP, TO-220, TO-247
STMicroelectronics
N-channel 650 V, 0.085 Ω, 27 A, MDmesh™ V Power MOSFET in D²PAK, TO-220FP, I²PAK, TO-220, TO-247
STMicroelectronics
N-channel 600 V - 0.27 Ω - 14 A - FDmesh™ II Power MOSFET D2PAK, I2PAK, TO-220, TO-220FP, TO-247
STMicroelectronics
N-channel 100 V, 0.009 Ω, 110 A STripFET™ II Power MOSFET in TO-247, TO-220, D²PAK, TO-220FP
STMicroelectronics
N-channel 600 V, 0.145 Ω typ., 21 A, FDmesh™ II Power MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247 packages
STMicroelectronics
N-channel 650 V, 0.150 Ω, 17 A MDmesh™ V Power MOSFET D²PAK, TO-220FP, TO-220, I²PAK, TO-247
STMicroelectronics
N-channel 600 V, 0.168 Ω typ., 17 A MDmesh™ II Power MOSFETs in TO-220FP, I²PAK, TO-220 and TO-247 packages
STMicroelectronics
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