Part Name
STP16NB25
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MFG CO.
STMicroelectronics
STP16NB25 Datasheet - STMicroelectronics
STMicroelectronics
DESCRIPTION
Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
■ TYPICAL RDS(on) = 0.220 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ UNINTERRUPTIBLE POWER SUPPLY (UPS)
■ DC-DC & DC-AC CONVERTERS FOR TELECOM, INDUSTRIAL AND CONSUMER ENVIRONMENT
Part Name
Description
View
MFG CO.
N-CHANNEL 250V - 0.38Ω - 8A TO-220/TO-220FP MESH OVERLAY™ MOSFET ( Rev : 2001 )
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N-channel 60V - 0.08Ω - 16A - TO-220/TO-220FP STripFET™ II Power MOSFET
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N-channel 250V - 0.38Ω - 8A TO-220 /TO-220FP Mesh Overlay™ Power MOSFET
STMicroelectronics
N - CHANNEL 60V - 0.08 Ω - 16A - TO-220/TO-220FP STripFET™ POWER MOSFET
STMicroelectronics
N-CHANNEL 60V - 0.08 Ω - 16A TO-220/TO-220FP STripFET™ II POWER MOSFET ( Rev : 2002 )
STMicroelectronics
N-CHANNEL 60V - 0.07 Ω - 16A TO-220/TO-220FP STripFET™ II POWER MOSFET
STMicroelectronics
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