Description
The MDmesh™ associates the multiple drain process with the company’s PowerMesh™ horizontal layout assuring an outstanding low on-resistance. The adoption of the company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.
FEATUREs
■ Low input capacitance and gate charge
■ Low gate input resistance
■ Best RDS(on)*Qg in the industry
APPLICATION
■ Switching applications
Part Name
Description
View
MFG CO.
N-channel 800 V, 0.65Ωtyp., 10.5 A Zener-protected SuperMESH™ Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247
STMicroelectronics
N-channel 500 V, 0.40 Ω, 11 A TO-220, TO-220FP, TO-247 Zener-protected SuperMESHTM Power MOSFET
STMicroelectronics
N-channel 800 V, 0.19 Ω typ., 19.5 A SuperMESH™5 Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247 packages ( Rev : 2013 )
STMicroelectronics
N-channel 800 V, 0.3 Ω typ., 14 A SuperMESH™ 5 Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247 packages ( Rev : 2012 )
STMicroelectronics
N-channel 900 V, 1.1 Ω, 8 A, TO-220, TO-220FP, D2PAK, TO-247 Zener-protected SuperMESH™ Power MOSFET ( Rev : 2010 )
STMicroelectronics
N-channel 650 V, 0.33 Ω, 12 A MDmesh™ II Power MOSFET TO-220, TO-220FP, D2PAK, I2PAK, TO-247
STMicroelectronics
N-channel 600 V, 0.17 Ω, 17 A FDmesh™ II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247 ( Rev : 2008 )
STMicroelectronics
N-channel 600 V - 0.13 Ω - 21 A FDmesh™ II Power MOSFET D2PAK - I2PAK - TO-220FP - TO-220 - TO-247 ( Rev : 2008 )
STMicroelectronics
N-channel 600 V, 0.17 Ω, 17 A FDmesh™ II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247
STMicroelectronics
N-channel 600 V, 0.130 Ω , 21 A, MDmesh™ II Power MOSFET TO-220, TO-220FP, I2PAK, D2PAK, TO-247
STMicroelectronics