STP11NM80(2007) Datasheet - STMicroelectronics
MFG CO.

STMicroelectronics
Description
The MDmesh™ associates the multiple drain process with the Company’s PowerMesh™ horizontal layout assuring an outstanding low on-resistance. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.
FEATUREs
■ Low input capacitance and gate charge
■ Low gate input resistance
■ Best RDS(on) *Qg in the industry
APPLICATION
■ Switching applications
Part Name
Description
View
MFG CO.
N-channel 800 V, 0.65Ωtyp., 10.5 A Zener-protected SuperMESH™ Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247
STMicroelectronics
N-channel 500V - 0.34Ω - 14A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-protected SuperMESHTM Power MOSFET
STMicroelectronics
N-channel 600 V - 0.150 Ω - 19 A - D2PAK - I2PAK - TO-220/FP TO-247, second generation MDmesh™ Power MOSFET
STMicroelectronics
Power MOSFET 125 A, 24 V N-Channel TO-220, D2PAK ( Rev : 2003 )
ON Semiconductor
N-channel 500V - 0.34Ω - 14A TO-220/FP/D2PAK/I2PAK/TO-247
Zener-protected SuperMESHTM Power MOSFET
Unspecified
N-CHANNEL 600V - 0.19 Ω - 22A TO-220/FP/D2PAK/I2PAK/TO-247 MDmesh™ Power MOSFET
STMicroelectronics
Power MOSFET 125 A, 24 V N−Channel TO−220, D2PAK
ON Semiconductor
N-channel 900V - 1.1Ω - 8A - TO-220 /FP- D2PAK - TO-247 Zener-protected superMESH™ MOSFET
STMicroelectronics
N-channel 55 V, 0.0065 Ω, 80 A, TO-220, D2PAK, TO-247 STripFET™ Power MOSFET
STMicroelectronics
N-channel 500 V, 0.40 Ω, 11 A TO-220, TO-220FP, TO-247 Zener-protected SuperMESHTM Power MOSFET
STMicroelectronics