Part Name
STP11NM80
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14 Pages
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MFG CO.
STMicroelectronics
STP11NM80(2005) Datasheet - STMicroelectronics
STMicroelectronics
DESCRIPTION
The MDmesh™ associates the Multiple Drain process with the Company’s PowerMesh™ horizontal layout assuring an oustanding low on-resistance. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.
General Features
■ TYPICAL RDS(on) = 0.35 Ω
■ LOW GATE INPUT RESISTANCE
■ LOW INPUT CAPACITANCE AND GATE
CHARGE
■ BEST RDS(on)*Qg IN THE INDUSTRY
APPLICATIONS
The 800 V MDmesh™ family is very suitable for
single switch applications in particular for Flyback
and Forward converter topologies and for ignition
circuits in the field of lighting.
Part Name
Description
View
MFG CO.
N-channel 800V - 0.78Ω- 9A - TO-220/FP-TO-247 Zener-protected superMESH MOSFET
Unspecified
N-channel 800V - 0.78Ω- 9A - TO-220/FP-TO-247 Zener-protected superMESH MOSFET
STMicroelectronics
N-CHANNEL 800V - 0.651} - 10.5A TO-220 / D2PAK / TO-247 Zener-Protected SuperMESH™ Power MOSFET
New Jersey Semiconductor
N-channel 900V - 1.1Ω - 8A - TO-220 /FP- D2PAK - TO-247 Zener-protected superMESH™ MOSFET
STMicroelectronics
N-channel 800V - 0.65Ω - 10.5A - TO-220 - D2PAK - TO-247 Zener - Protected SuperMESH™ Power MOSFET ( Rev : 2007 )
STMicroelectronics
N-channel 500V - 0.34Ω - 14A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-protected SuperMESHTM Power MOSFET
STMicroelectronics
N-channel 500V - 0.34Ω - 14A TO-220/FP/D2PAK/I2PAK/TO-247
Zener-protected SuperMESHTM Power MOSFET
Unspecified
N-CHANNEL 600V - 0.19 Ω - 22A TO-220/FP/D2PAK/I2PAK/TO-247 MDmesh™ Power MOSFET
STMicroelectronics
N-CHANNEL 800V - 1.3Ω - 6.5A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH™III MOSFET
STMicroelectronics
N-channel 600V - 0.140Ω - 20A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh™ Power MOSFET ( Rev : 2007 )
STMicroelectronics
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