Part Name
STP11NM80
Description
PDF
page
22 Pages
File Size
902.3 kB
MFG CO.
STMicroelectronics
STP11NM80 Datasheet - STMicroelectronics
STMicroelectronics
Description
These N-channel Power MOSFETs are developed using STMicroelectronics revolutionary MDmesh™ technology, which associates the multiple drain process with the companys PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing STs proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.
FEATUREs
■ Low input capacitance and gate charge
■ Low gate input resistance
■ Best RDS(on)*Qg in the industry
APPLICATIONs
■ Switching applications
Part Name
Description
View
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