DESCRIPTION
   The STN9926AA is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
   This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer Li-ion Battery , power management and other battery powered circuits where high-side switching .

FEATURE
● 20V/6.0A, RDS(ON) = 30mΩ
                             @VGS = 4.5V
● 20V/5.0A, RDS(ON) = 42mΩ
                             @VGS = 2.5V
● Super high density cell design for
   extremely low RDS(ON)
● Exceptional on-resistance and
   maximum DC current capability
● SOP-8 package design