DESCRIPTION
   STN18T20 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power management and other battery powered circuits where high-side switching.

FEATURE
● 200V/12A, RDS(ON) = 170mΩ(Typ.)
                      @VGS = 10V
● Super high density cell design for
   extremely low RDS(ON)
● Exceptional on-resistance and
   maximum DC current capability
● TO-252 package design