STL19N60DM2 Datasheet - STMicroelectronics
MFG CO.

STMicroelectronics
Description
This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast-recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined
with low RDS(on), rendering it suitable for the most demanding high-efficiency
converters and ideal for bridge topologies and ZVS phase-shift converters.
FEATUREs
• Fast-recovery body diode
• Extremely low gate charge and input capacitance
• Low on-resistance
• 100% avalanche tested
• Extremely high dv/dt ruggedness
• Zener-protected
APPLICATIONs
• Switching applications
Part Name
Description
View
MFG CO.
N-channel 600 V, 0.320 Ω typ., 10 A MDmesh™ II Power MOSFET in a PowerFLAT™ 8x8 HV package
STMicroelectronics
N-channel 600 V, 0.186 Ω typ., 18 A MDmesh™ M2 Power MOSFET in a PowerFLAT™ 8x8 HV package
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N-channel 650 V, 180 mΩ typ., 15 A, MDmesh M5 Power MOSFET in a PowerFLAT 8x8 HV package
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N-channel 600 V, 0.310 Ω typ., 11 A MDmesh™ DM2 Power MOSFET in a DPAK package ( Rev : 2016 )
STMicroelectronics
N-channel 600 V, 0.310 Ω typ., 11 A MDmesh™ DM2 Power MOSFET in a DPAK package
STMicroelectronics
N-channel 650 V, 0.180 Ω typ., 15 A MDmesh™ V Power MOSFET in a PowerFLAT™ 8x8 HV package ( Rev : 2013 )
STMicroelectronics
N-channel 650 V, 0.135 Ω typ., 15 A MDmesh™ V Power MOSFET in a PowerFLAT™ 8x8 HV package
STMicroelectronics
N-channel 650 V, 0.061 Ω typ., 22.5 A MDmesh™ V Power MOSFET in a PowerFLAT™ 8x8 HV package
STMicroelectronics
N-channel 600 V, 0.310 Ω typ., 11 A MDmesh™ DM2 Power MOSFET in a TO-220 package
STMicroelectronics
N-channel 600 V, 0.186 Ω typ., 18 A MDmesh II Plus™ low Qg Power MOSFET in a PowerFLAT™ 8x8 HV package ( Rev : 2014 )
STMicroelectronics