Description
These devices utilize the 7th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
FEATUREs
• Ultra low on-resistance
• 100% avalanche tested
APPLICATIONs
• Switching applications
Part Name
Description
View
MFG CO.
N-channel 100 V, 6.8 mΩ typ., 80 A STripFET F7 Power MOSFETs in D2PAK, DPAK, TO-220FP, I2PAK and TO-220 packages
STMicroelectronics
N-channel 100 V, 0.0036 Ω typ., 110 A, STripFET™ F7 Power MOSFETs in I2PAK and TO-220 packages
STMicroelectronics
N-channel 100 V, 5.1 mΩ typ., 110 A, STripFET™ VII DeepGATE™ Power MOSFETs in TO-220FP and TO-220 packages
STMicroelectronics
N-channel 550 V, 0.150 Ω typ., 16 A MDmesh M5 Power MOSFETs in a DPAK and TO-220 packages ( Rev : 2021 )
STMicroelectronics
N-channel 100 V, 0.027 Ω typ., 25 A, STripFET™ VII DeepGATE™ Power MOSFET in DPAK, TO-220FP and TO-220 packages
STMicroelectronics
N-channel 800 V, 0.95 Ω typ., 6 A MDmesh K5 Power MOSFETs in DPAK, TO-220 and IPAK packages ( Rev : 2020 )
STMicroelectronics
N-channel 525 V, 0.72 Ω typ., 6 A, MDmesh™ K3 Power MOSFETs in DPAK and TO-220 packages ( Rev : 2018 )
STMicroelectronics
N-channel 500 V, 0.73 Ω typ., 5 A, MDmesh™ II Power MOSFETs in DPAK and TO-220 packages ( Rev : 2018 )
STMicroelectronics
N-channel 1000 V, 6.25 Ω typ., 1.85 A SuperMESH™ Power MOSFETs in DPAK, TO-220 and IPAK packages
STMicroelectronics
N-channel 900 V, 5 Ω typ., 2.1 A SuperMESH™ Power MOSFETs in IPAK, DPAK and TO-220 packages ( Rev : 2018 )
STMicroelectronics