Description
This device utilizes the advanced PowerMESH™ process for the IGBT and the Turbo 2 Ultrafast high voltage technology for the diode. The combination results in a very good trade-off between conduction losses and switching behavior rendering the product ideal for diverse high voltage applications operating at high frequencies.

FEATUREs
• Designed for automotive applications and
   AEC-Q101 qualified
• Low on-voltage drop (VCE(sat))
• Low Cres / Cies ratio (no cross conduction
   susceptibility)
• Switching losses include diode recovery
   energy
• Short-circuit rated
• Very soft Ultrafast recovery anti-parallel diode

APPLICATIONs
• High frequency inverters
• SMPS and PFC in both hard switch and
   resonant topologies
• Motor drives
• Injection systems